PART |
Description |
Maker |
SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 |
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA): Package: CMPAK-6 3-Phase Bridge Rectifier IGBT braking chopper
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Semikron International
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SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
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Semikron International
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6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls 6,12 and 16 Amp Diffused Silicon Rectifier Diodes
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IRF[International Rectifier]
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2N5754 2N5755 2N5756 2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. 2.5-A silicon triac. Voltage(typ) 400 V. 2.5-A silicon triac. Voltage(typ) 200 V. 2.5-A silicon triac. Voltage(typ) 100 V. 2.5-A Silicon Triacs
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General Electric Solid State Solid State Optronic N.A.
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S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
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Hamamatsu Photonics
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CRG01 CRG02 |
Rectifier Silicon Diffused Type General Purpose Rectifier Applications
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TOSHIBA
|
1GU42 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS (FAST RECOVERY)
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TOSHIBA
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S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
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Hamamatsu Photonics K.K.
|
S5688G |
(S5688x) Rectifier Silicon Diffused Type
|
Toshiba Semiconductor
|
R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 2200 A, 800 V, SILICON, RECTIFIER DIODE 2200 A, 600 V, SILICON, RECTIFIER DIODE 2200 A, 400 V, SILICON, RECTIFIER DIODE 450 A, 150 V, SILICON, RECTIFIER DIODE 550 A, 50 V, SILICON, RECTIFIER DIODE 550 A, 150 V, SILICON, RECTIFIER DIODE 2500 A, 1300 V, SILICON, RECTIFIER DIODE 300 A, 900 V, SILICON, RECTIFIER DIODE 1800 A, 200 V, SILICON, RECTIFIER DIODE 1200 A, 3100 V, SILICON, RECTIFIER DIODE 2000 A, 2300 V, SILICON, RECTIFIER DIODE 3600 A, 2300 V, SILICON, RECTIFIER DIODE 100 A, 150 V, SILICON, RECTIFIER DIODE
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POWEREX INC
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R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN 300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN 300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN 1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN 350 A, 2200 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 200 A, 1500 V, SILICON, RECTIFIER DIODE 1500 A, 1200 V, SILICON, RECTIFIER DIODE 125 A, 800 V, SILICON, RECTIFIER DIODE 150 A, 1200 V, SILICON, RECTIFIER DIODE 400 A, 200 V, SILICON, RECTIFIER DIODE 800 A, 3200 V, SILICON, RECTIFIER DIODE 350 A, 700 V, SILICON, RECTIFIER DIODE 400 A, 900 V, SILICON, RECTIFIER DIODE 100 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1700 V, SILICON, RECTIFIER DIODE 800 A, 3100 V, SILICON, RECTIFIER DIODE 250 A, 50 V, SILICON, RECTIFIER DIODE 800 A, 3600 V, SILICON, RECTIFIER DIODE 330 A, 500 V, SILICON, RECTIFIER DIODE
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Powerex, Inc. POWEREX INC
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